Active matrix display and electrooptical device

ABSTRACT

A liquid crystal device having a source line over a substrate, a gate line over the substrate, and a plurality of pixels or a pixel electrode over the substrate. A plurality of pixels may be arranged in a matrix array at intersections of source lines and gate lines. Each of a plurality of pixels may have first and second thin film transistors, a pixel electrode, and a light source. A portion of one of the source lines may cover a first thin film transistor so that the first thin film transistor is light shielded while a second transistor may not be covered by any portion of one of the source lines.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an active matrix display constructionand, more particularly, to a circuit and device structure for improvingthe quality of the image displayed on the viewing screen.

2. Description of the Related Art

FIG. 2(A) schematically shows a conventional active matrix display. Inthis figure, the region 204 surrounded by the broken line is a displayregion. Thin-film transistors 201 (only one is shown) are arranged inrows and columns in this region 204. Conductive interconnects connectedwith the source electrodes of the thin-film transistors 201 are imagesignal lines or data signal lines 206. Conductive interconnectsconnected with the gate electrodes of the thin-film transistors 201 aregate-selecting signal lines 205 (only one is shown).

We now take notice of driver devices. The thin-film transistors. 201 actto switch data, and drive a liquid-crystal cell 203. Auxiliarycapacitors 202 (only one is shown) are used to reinforce the capacitanceof the liquid-crystal cell, and act to hold image data. The thin-filmtransistors 201 are employed to switch image data indicated by thevoltage applied across the liquid-crystal material. Let V_(GS) be thegate voltage of each thin-film transistor. Let I_(D) be the draincurrent. The relation V_(GS)-I_(D) is shown in FIG. 3. In particular, ifthe gate voltage V_(GS) is in the cutoff region of the thin-filmtransistor, the drain current I_(D) is increased, and it is called OFFcurrent.

In the case of an N-channel thin-film transistor, the OFF currentflowing when the gate voltage V_(GS) is biased negatively is stipulatedby the current flowing through a PN junction formed between a P-typelayer and an N-type layer. The P-type layer is induced in the surface ofthe thin-film semiconductor. The N-type layer is formed in the sourceand drain regions. Because numerous traps exist in the thin-filmtransistor, this PN junction is incomplete and so the junction tends toproduce a leakage current. As the gate electrode is biased morenegatively, the OFF current is increased, for the following reason. Theconcentration of carriers in the P-type layer formed in the surface ofthe thin-film semiconductor is increased, thus reducing the width of theenergy barrier in the PN junction. As a result, the electric field isconcentrated, so that the current leaking from the junction increases.

The OFF current produced in this way depends greatly on the source/drainvoltage. For example, it is known that as the voltage applied betweenthe source and drain of a thin-film transistor is increased, the OFFcurrent is increased drastically. That is, the OFF current produced whena voltage of 10 V is applied is not merely twice as large as the OFFcurrent produced when a voltage of 5 V is applied between the source anddrain. Rather, the ratio of the former OFF current to the latter OFFcurrent reaches 10 or even 100. This nonlinearlity also depends on thegate voltage. Generally, where the reverse bias applied to the gateelectrode is large (in the case of an N-channel type, a large negativevoltage), the ratio is large.

In an attempt to solve this problem, the multi-gate method has beenproposed as described in Japanese Patent Publication Nos. 44195/1993 and44196/1993. In this method, thin-film transistors are connected inseries. This method is intended to reduce the OFF current of eachindividual thin-film transistor, by reducing the voltage applied betweenthe source and drain of each thin-film transistor. For example, wheretwo thin-film transistors are connected in series as shown in FIG. 2(B),the voltage applied between the source and drain of each thin-filmtransistor is halved. This reduces the OFF current by a factor of 10 oreven 100 because of the principle described above.

TFTs, source lines, and gate lines are formed in an active matrixcircuit. These elements hinder transmission of light. Specifically, theratio (aperture ratio) of the area of the region that can be used forimage display to the whole area is small. Typically, the aperture ratiois 30 to 60%. Especially, in a backlit display device comprising anactive matrix circuit backlit with intense light, if the aperture ratiois small, a major portion of the incident light is absorbed by TFTs andby the liquid-crystal material and so these TFTs and liquid-crystalmaterial get hot. As a result, their characteristics are deteriorated.

However, as the image displayed on a liquid crystal display is requiredto have stricter characteristics, it is more difficult to reduce the OFFcurrent by a required amount by the aforementioned multi-gate method. Inparticular, if the number of the gate electrodes (or, the number ofthin-film transistors) is increased to 3, 4, and 5, then the voltageapplied between the source and drain of each TFT decreases to one-third,one-fourth, and one-fifth, respectively. In this way, the latter voltagedoes not decrease rapidly. Therefore, in order to reduce the voltagebetween the source and drain by a factor of 100, as many as 100 gatesare needed. That is, in this method, the resulting advantage is mostconspicuous where the number of gates is two. However, if more gates areprovided, great advantages cannot be expected.

SUMMARY OF THE INVENTION

In view of the foregoing problems, the present invention has been made.

It is an object of the invention to provide a pixel circuit whichreduces the voltage applied between the source and drain of each TFT(thin-film transistor) connected with a pixel electrode down to a levelwhich is about less than one-tenth, preferably less than one-hundredth,of the level normally obtained, thus reducing the OFF current. Thispixel circuit is characterized in that the number of TFTs used for theabove-described object is reduced sufficiently. Preferably, the numberof the TFTs is less than 5, more preferably 3.

It is another object of the invention to provide an active matrixdisplay comprising TFTs which are prevented from being irradiated withlight without lowering the aperture ratio.

The theory underlying the inventive concept is illustrated in FIG. 2(C),where TFTs (thin-film transistors) 221 and 222 are connected in series.A capacitor 223 is inserted between these TFTs 221 and 222 to lower thevoltage produced between the source and drain of the TFT 222 especiallylocated on the side of a pixel electrode. This reduces the OFF currentof the TFT 222. The illustrated capacitor 224 is not always necessary.Rather, this capacitor 224 increases the burden imposed during writing.Therefore, if the ratio of the capacitance of a pixel cell 225 to thecapacitance 223 is appropriate, then it may be desired to dispense withthe capacitor 224.

The operation is next described in detail. When a select signal is sentto a gate signal line 226, both TFTs 221 and 222 are turned ON.Depending on the signal on an image signal line 227, the capacitors 223,224 and the pixel cell 225 are electrically charged. When they are fullycharged, i.e., when a balanced state is obtained, the voltage applied tothe source of the TFT 222 is substantially equal to the voltage appliedto the drain of the TFT 222.

Under this condition, if the select signal is made to cease, both TFTs221 and 222 are turned OFF. Then, a signal for other pixel is applied tothe image signal line 227. The TFT 221 produces a finite amount ofleakage current. Consequently, the electric charge stored in thecapacitor 223 is released, so that the voltage drops but at a rateroughly equal to the rate at which the voltage developed across thecapacitor 202 of the normal active matrix circuit shown in FIG. 2(A)drops.

On the other hand, with respect to the TFT 222, the voltage developedbetween the source and drain is initially almost zero. For this reason,the OFF current is quite weak. Then, the voltage developed across thecapacitor 223 drops. Therefore, the voltage between the source and drainincreases gradually. This, in turn, increases the OFF current.Obviously, increases in the OFF current lower the voltage developedacross the pixel cell 225 sufficiently more mildly than in the case ofthe normal active matrix circuit shown in FIG. 2(A).

For example, it is assumed that the TFTs 201 and 221 have similarcharacteristics and that the voltage developed across the capacitor 202changes from 10 V to 9 V, or 90%, during one frame. In the caseillustrated in FIG. 2(A), the voltage developed across the pixel cell203 drops down to 9 V during one frame. However, in the case illustratedin FIG. 2(C), even if the voltage developed across the capacitor 223drops to 9 V, the OFF current is quite small because the voltage betweenthe source and drain of the TFT 222 is 1 V. This holds true when oneframe ends. Consequently, the accumulated amount of electric chargereleased from the pixel cell 225 and from the capacitor 224 is quitesmall. Hence, the voltage developed across the pixel cell 225 issubstantially maintained at 10 V.

It is not easy to compare the case illustrated in FIG. 2(A) with thecase illustrated in FIG. 2(B). In FIG. 2(B), the voltage applied betweenthe source and drain of one TFT is half (or 5 V) of the voltage (10 V)applied in the case of FIG. 2(A). It is unlikely that the voltagebetween the source and drain is 1 V, unlike the case of TFT 222 shown inFIG. 2(C). This is one advantage of the present invention.

If LDD regions or offset regions are inserted in the channels of theTFTs 221 and 222, then these regions form drain resistors and sourceresistors, respectively. This mitigates the electric field strength atthe drain junction. Obviously, this reduces the OFF current further.

If a combination of TFTs and capacitors is added as shown in FIG. 2(D),then greater effect can be produced. However, the rate at which theeffect is increased is lower than in the case in which the configurationshown in FIG. 2(A) is replaced by the configuration shown in FIG. 2(C).

In the above-described structure, the capacitors 223 and 224 can beordinary capacitors. If one or both of them are MOS capacitors, thenintegration can be accomplished more efficiently. As mentionedpreviously, the capacitor 224 is not always necessary. If a lightlydoped region is formed between the TFTs 221 and 222 to form a circuitconfiguration in which a resistor is inserted in series, then the OFFcurrent can be reduced further.

Each capacitor consists of a fixed capacitor comprising two oppositemetal electrodes. Instead, each capacitor may consist of a MOS capacitorformed by laminating a gate-insulating film and a gate electrode on asubstantially intrinsic semiconductor film. The MOS capacitor ischaracterized in that the capacitance is varied by the potential at thegate electrode.

In one example of the MOS capacitor, three or more TFTs are connected inseries with each one pixel electrode. At least one of them excludingthose of the series connected TFTs which are located at opposite ends ismaintained in conduction and used as a capacitor. In another example, aMOS capacitor is connected to the junction of the drain of one of theTFTs connected in series and the source of the other TFT. A stableelectrostatic capacitance is obtained by maintaining the gate electrodeof the MOS capacitor at an appropriate potential.

The present invention is characterized in that source lines are formedso as to cover channels in TFTs. The TFTs can be the top gate typeobtained by forming a thin-film semiconductor region, gate lines (gateelectrodes), an interlayer insulator, and source lines in this order.Alternatively, the TFTs can be the bottom gate type obtained by forminggate lines (gate electrodes), a thin-film semiconductor region, aninterlayer insulator, and source lines in this order. It is to be notedthat an ordinary active matrix circuit using bottom gate TFTs has nointerlayer insulator. In the present invention, however, an interlayerinsulator is needed to provide insulation between channel and sourcelines.

FIGS. 21 and 22 show conventional arrangements of TFTs in active matrixcircuits. Gate lines 19 (only one is shown) and source lines 21 (onlyone is shown) are arranged so as to cross each other substantially atright angles. Branch lines 20 (only one is shown) extend from the gatelines and are made to overlap thin-film semiconductor regions. Thus, thebranch lines 20 are used as gate electrodes of TFTs. At one end of eachthin-film semiconductor region, a pixel electrode 22 and a contact 25are formed. At the other end, a source line and a contact 24 are formed.

That portion of each thin-film semiconductor region which substantiallyoverlaps the gate line is a channel 23. As shown in FIGS. 21 and 22, thechannel 23 is widely spaced from the source line 21. The branch line 20from the gate line increases the area occupied by the TFT, thusdeteriorating the aperture ratio.

In the present invention, any structure corresponding to the branch line20 is not formed. A channel is formed under a source line. This reducesthe area occupied by the TFT. Also, the aperture ratio can be enhanced.The channel in a TFT is easily affected by light. Therefore, the wholeTFT is normally enclosed. Furthermore, a light-shielding film is formed.This further lowers the aperture ratio. In the present invention, asource line is formed so as to cover the channel, thus shielding thechannel from extraneous light. Consequently, it is not necessary to forma light-shielding film. This is quite effective in enhancing theaperture ratio.

The active matrix circuit of this construction is quite advantageouslyused for a backlit display device. As described above, a backlit displaydevice is required to have a high aperture ratio. In addition, thedevice is illuminated with intense light. Hence, it is imperative thatTFTs be shielded from light. In the present invention, light isprojected from above source lines. This assures that the source linesshield the channels in the TFTs from light.

Other objects and features of the invention will appear in the course ofthe description thereof, which follows.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1( a)–1(e) are fragmentary circuit diagrams of active matrixcircuit devices according to the invention;

FIG. 2(A) is a fragmentary schematic circuit diagram of the prior artactive matrix circuit;

FIGS. 2(B)–2(D) are fragmentary schematic circuit diagrams of activematrix circuits according to the invention;

FIGS. 3(A)–3(D) are diagrams illustrating arrangements of semiconductorregions and gates according to the invention;

FIGS. 4(A)–4(F) are cross-sectional views of active matrix circuitdevices according to the invention, illustrating the process sequence ofa method of fabricating the circuit devices;

FIGS. 5(A)–5(E) are cross-sectional views of active matrix circuitdevices according to the invention, illustrating the process sequence ofanother method of fabricating the circuit devices;

FIG. 6 is a diagram illustrating the manner in which an active matrixcircuit device according to the invention is driven;

FIGS. 7(A)–7(D) are diagrams of arrangements and circuits comprisingsemiconductor regions and gates according to the invention;

FIGS. 8(A)–8(C) are diagrams showing arrangements of semiconductorregions and gates according to the invention;

FIGS. 9(A)–9(F) are diagrams showing arrangements of pixel electrodesand other components according to the invention;

FIGS. 10(A)–10(E) are cross-sectional views of active matrix circuitdevices, illustrating the process sequence of a further method offabricating the circuit devices according to the invention;

FIG. 10(F) is a circuit diagram of an active matrix circuit according tothe invention;

FIGS. 11(A)–11(C) are diagrams showing arrangement of pixel electrodesand other components according to the invention;

FIG. 12 is a cross-sectional view of active matrix circuit devicesaccording to the invention;

FIGS. 13(A)–13(B) are a top view and a cross-sectional view of a TFT,illustrating a manufacturing step for fabricating the TFT according tothe invention;

FIGS. 14(A)–14(B) are a top view and a cross-sectional view of anotherTFT, illustrating a manufacturing step for fabricating the TFT accordingto the invention;

FIGS. 15(A)–15(B) are a top view and a cross-sectional view of a furtherTFT, illustrating a manufacturing step for fabricating the TFT accordingto the invention;

FIGS. 16(A)–16(B) are a top view and a cross-sectional view of yetanother TFT, illustrating a manufacturing step for fabricating the TFTaccording to the invention;

FIGS. 17(A)–17(B) are a top view and a cross-sectional view of a yetfurther TFT, illustrating a manufacturing step for fabricating the TFTaccording to the invention;

FIGS. 18(A)–18(B) are a top view and a cross-sectional view of stillanother TFT, illustrating a manufacturing step for fabricating the TFTaccording to the invention;

FIGS. 19(A)–19(B) are a top view and a circuit diagram of an additionalTFT, illustrating a manufacturing step for fabricating the TFT accordingto the invention;

FIGS. 20(A)–20(B) are a top view and a circuit diagram of a stillfurther TFT, illustrating a manufacturing step for fabricating the TFTaccording to the invention;

FIG. 21 is a circuit diagram showing a conventional arrangement of TFTs;and

FIG. 22 is a circuit diagram illustrating another conventionalarrangement of TFTs.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS EXAMPLE 1

FIG. 1( a) shows an active matrix display device in which threethin-film transistors (TFTs) are connected with one electrode of onepixel cell 105. All of these TFTs are of the N-channel type. The TFTscan also be of the P-channel type. Where each TFT uses a crystallinesilicon semiconductor formed by a low-temperature process, the P-channeltype produces smaller OFF current and is deteriorated less easily thanthe N-channel type.

Two TFTs 101 and 102 share gate interconnects and are connected with agate signal line. The source of the TFT 101 is connected with an imagesignal line. A further TFT 103 which is maintained in conduction isconnected between the two TFTs 101 and 102. In order to maintain the TFT103 in conduction, it is desired to apply a sufficiently high positivepotential to the gate so that the TFT 103 is hardly affected by imagesignal or other signal.

For example, where the image signal varies from −10 V to +10 V, the gateof the TFT is maintained above +15 V, preferably above +20 V. Forinstance, if the potential at the gate of the TFT 103 is +11 V, thepotential difference between the gate and source varies around thethreshold voltage, i.e., from +1 V to +11 V. Also, the capacitanceobtained by the TFT 103 varies greatly. On the other hand, if thepotential at the gate of the TFT 103 is +20 V, the potential differencebetween the gate and the source varies from +10 V to +30 V butsufficiently remote from the threshold voltage. Therefore, thecapacitance obtained by the TFT 103 hardly varies.

The liquid crystal cell 105 and an auxiliary capacitor 104 are connectedwith the drain of the TFT 102. The other electrode of the liquid crystalcell 105 and the other electrode of the auxiliary capacitor 104 aregrounded. If the capacitance of the liquid crystal cell 105 issufficiently large, the auxiliary capacitor 104 can be dispensed with.The ratio of the capacitance of the MOS capacitor 103 to the sum of thecapacitance of the auxiliary capacitor 104 and the capacitance of theliquid crystal cell 105 is determined optimally.

The operation of the configuration shown in FIG. 1( a) is now described.A high-level voltage is applied to the gates of two TFTs 101 and 102,thus turning them-ON. An electrical current corresponding to an imagesignal flows through the source of the TFT 101. The TFT 103 which ismaintained in conduction and connected with the drain of the TFT 101acts as a capacitor and starts charging. Since the TFT 103 is held inconduction, an electrical current flows from the source of the TFT 102to the drain, thus electrically charging the auxiliary capacitor 104 andthe liquid crystal cell 105.

Then, if a low-level voltage is impressed on the gates of the TFTs 101and 102, they are biased into cutoff. The voltage developed across thesource of the TFT 101 drops, so that an OFF current flows through theTFT 103 which is kept in conduction. Thus, electrical discharging isstarted. However, the capacitance of the invariably conducting TFT 103delays the drop of the voltage between the drain and source of the TFTconnected to the pixel. Consequently, the amount of electric chargereleased from the auxiliary capacitor 104 and from the liquid crystalcell 105 decreases. The amount of electric charge released from theliquid crystal cell 105 is suppressed until the TFT is driven intoconduction during the next frame of image. The drain voltage varied inthis way is indicated by curve (a) in FIG. 6.

Referring again to FIG. 1( a), we now discuss a circuit in which theinvariably conducting N-channel TFT 103 has been omitted. The twoN-channel TFTs 101 and 102 share the gate interconnects. The liquidcrystal cell 105 and the auxiliary capacitor 104 are connected to thedrain of the TFT 102. This is the circuit shown in FIG. 2(B) and knownas a so-called multi-gate circuit.

A high-level voltage is first applied to the gate electrodes of the twoTFTs 101 and 102, thus turning them ON. An electrical current flowsthrough the sources of the TFTs, so that the auxiliary capacitor 104 andthe liquid crystal cell 105 are electrically charged.

Then, a low-level voltage is applied to the gates of the TFTs 101 and102. As a result, the TFTs 101 and 102 are biased into cutoff. Thevoltage developed across the source of the TFT 101 drops. This lowersthe voltage at the drain of the TFT 102. Consequently, the auxiliarycapacitor 104 and the liquid crystal cell 105 start to electricallydischarge. The drain voltage varied in this way is indicated by curve(b) in FIG. 6. The amount of electric charge released is greater thanthe amount of electric charge released in the case indicated by curve(a). Also, the voltage drop is greater.

The present example demonstrates the usefulness of the presentinvention. Obviously, if a TFT similar to the TFTs 102 and 103 isinserted between TFTs 192 and 104, greater advantages can be obtained,in the same way as in the configuration shown in FIG. 2(D).

EXAMPLE 2

FIG. 1( b) shows an example of pixel of an active matrix circuit inwhich two TFTs are connected with one pixel electrode. All of the TFTsare of the N-channel type. Similar advantages can be obtained if theyare of the P-channel type.

Two TFTs 111 and 112 share gate interconnects and are connected with agate signal line. A MOS capacitor 113 is connected between the sourceand drain of each TFT. The MOS capacitor 113 may be formed by shortingthe source, of an ordinary TFT to the drain. Since the MOS capacitoruses an N-channel TFT, if the gate is maintained at an appropriatepositive potential, the MOS capacitor acts as a capacitor. In order thatthe MOS capacitor function stably, the potential is preferablymaintained at a sufficiently high potential, in the same way as the gateof the TFT 103 of Example 1.

In order to implement the present invention, it is necessary that thegate of the MOS capacitor 113 be maintained at the aforementionedpotential for a major portion of the time during which the pixel ofinterest is not selected. When the pixel is selected, i.e., a signalappearing on the image signal line is being written to the pixel, thegate of the MOS capacitor 103 is preferably maintained at the potentialdescribed above. The capacitor 114 and the gate electrode of the MOScapacitor 113 are connected with a capacitor line extending parallel tothe gate signal line, and are maintained at the potential for theabove-described purpose.

The liquid crystal cell 115 and the auxiliary capacitor 114 areconnected with the drain of the TFT 112. The source of the TFT 111 isconnected with the image signal line. If the capacitance of the liquidcrystal cell 115 is sufficiently large, the auxiliary capacitor 114 isunnecessary.

The operation of the configuration shown in FIG. 1( b) is now described.For simplicity, it is assumed that the gate of the MOS capacitor 113 ismaintained at a sufficiently high positive potential. First, ahigh-level voltage is applied to the gates of two TFTs 111 and 112, thusbiasing them into conduction.

As a result, an electrical current flows through the source of the TFT111. The MOS capacitor 113 connected with the drain of the TFT 111 isstarted to be electrically-charged. An electrical current flows from thesource electrode of the TFT 112 to the drain current, thus electricallycharging the auxiliary capacitor 114 and the liquid crystal cell 115.

Thereafter, a low-level voltage is applied to the gate electrodes of theTFTs 111 and 112, so that these TFTs are turned off. The voltage at thesource electrode of the TFT 111 drops. The OFF current from the TFTstarts to electrically charge the MOS capacitor 113. However, the MOScapacitor 113 delays the drop of the voltage developed between the drainand source of the TFT connected with the pixel. The amount of electriccharge released from the auxiliary capacitor and from the liquid crystalcell 115 is reduced. The amount of electric charge released from theliquid crystal cell 115 is suppressed until the TFT is driven intoconduction during the next frame of image. The waveforms of the signalsproduced during this operation are the same as the waveform produced inExample 1.

EXAMPLE 3

FIG. 1( c) shows an example of pixel of an active matrix circuit inwhich two TFTs are connected with one pixel electrode. All of the TFTsare of the N-channel type. Similar advantages can be obtained if theyare of the P-channel type.

Two TFTs 121 and 122 share gate interconnects and are connected with agate signal line. A capacitor 123 is connected between the source anddrain of each TFT.

The auxiliary capacitor 124 is formed, using a MOS capacitor. Inparticular, the auxiliary capacitor 124 is formed by shorting the sourceof an ordinary TFT to the drain, in the same way as in the case of theMOS capacitor 113 of Example 2. Since this MOS capacitor is composed ofan N-channel TFT, if the gate is maintained at an appropriate positivepotential, then the N-channel TFT acts as a capacitor. In order that theN-channel TFT act as a capacitor stably, the gate is preferablymaintained at a sufficiently high positive potential, in the same way asin the gate of the MOS capacitor 113 of Example 2.

In order to implement the present invention, it is necessary that thegate of the MOS capacitor 124 be maintained at the aforementionedpotential at least for a major portion of the time during which thepixel of interest is not selected. When the pixel is selected, i.e., asignal appearing on the image signal line is being written to the pixel,the gate of the auxiliary capacitor 124 is preferably maintained at thepotential described above. The capacitor 123 and the gate electrode ofthe MOS capacitor 124 are connected with a capacitor line extendingparallel to the gate signal line, and are maintained at the potentialfor the above-described purpose.

The liquid crystal cell 125 and the auxiliary capacitor 124 areconnected with the drain of the TFT 122. The source of the TFT 121 isconnected with the image signal line. The circuit devices constructed inthis way operate in the same way as in Examples 1 and 2.

EXAMPLE 4

FIG. 1( d) shows an example of pixel of an active matrix circuit inwhich two TFTs are connected with one pixel electrode. All of the TFTsare of the N-channel type. Similar advantages can be obtained if theyare of the P-channel type.

Two TFTs 131 and 132 share gate interconnects and are connected with agate signal line. A capacitor 133 is connected between the source anddrain of each TFT. This auxiliary capacitor 133 is formed by shortingthe source of an ordinary TFT to the drain, in the same way as in thecase of the MOS capacitor 113 of Example 2.

In the present example, the auxiliary capacitor 134 is formed, alsousing a MOS capacitor. Since these MOS capacitors are N-channel TFTs, ifthe gates are maintained at an appropriate positive potential, then theN-channel TFTs act as capacitors. In order that the N-channel TFTs actas capacitors stably, the gates are preferably maintained at asufficiently high positive potential, in the same way as in the gate ofthe MOS capacitor 113 of Example 2. In order to implement the presentinvention, it is necessary that the gates of these MOS capacitors bemaintained at the aforementioned potential at least for a major portionof the time during which the pixel of interest is not selected.

When the pixel is selected, i.e., a signal appearing on the image signalline is being written to the pixel, the gates of the auxiliarycapacitors are preferably maintained at the potential described above.The gate electrodes of the MOS capacitors 133 and 134 are connected witha capacitor line extending parallel to the gate signal line, and aremaintained at the potential used for the above-described purpose.

The liquid crystal cell 135 and the auxiliary capacitor 134 areconnected with the drain of the TFT 132. The source of the TFT 131 isconnected with the image signal line. The circuit devices constructed inthis way operate in the same way as in Examples 1–3.

EXAMPLE 5

FIG. 1( e) shows an example of pixel of an active matrix circuit inwhich two TFTs are connected with one pixel electrode. All of the TFTsare of the N-channel type. If they are of the P-channel type, similaradvantages can be had.

Two TFTs 141 and 142 share gate interconnects and are connected with agate signal line. A capacitor 143 is connected between the source anddrain of each TFT. In order to reduce the OFF current further, aresistor 146 is directly inserted between the TFTs 141 and 142. Thisresistor 146 may be formed by forming a lightly doped region in asemiconductor film constituting the TFTs 141 and 142.

The auxiliary capacitor 144 is formed, using a MOS capacitor, in thesame way as in Example 3. Since the MOS capacitor consists of anN-channel TFT in the same way as in Example 3, if the gate is maintainedat an appropriate positive potential, then the N-channel TFT acts as acapacitor. In order that the N-channel TFT act as a capacitor stably,the potential is preferably maintained at a sufficiently high positivepotential, in the same way as the gate of the MOS capacitor 123 ofExample 3. In order to implement the present invention, it is necessarythat the gate of the MOS capacitor 144 be maintained at theaforementioned potential at least for a major portion of the time duringwhich the pixel of interest is not selected.

When the pixel is selected, i.e., a signal appearing on the image signalline is being written to the pixel, the gate of the auxiliary capacitor144 is preferably maintained at the potential described above. The gateelectrodes of the MOS capacitors 143 and 144 are connected with acapacitor line extending parallel to the gate signal line, and aremaintained at the potential used for the above-described purpose.

The liquid crystal cell 145 and the auxiliary capacitor 144 areconnected with the drain of the TFT 142. The source of the TFT 141 isconnected with the image signal line. The circuit devices constructed inthis way operate in the same way as in Examples 1–4.

EXAMPLE 6

The present example relates to the process sequence for fabricating thecircuits of Examples 1–4. In the present example, a gate electrode isanodized to form an offset gate. This reduces the OFF current.Techniques for anodizing the gate electrode are disclosed in JapanesePatent Laid-Open No. 267667/1993.

FIGS. 4(A)–4(D) illustrate the process sequence of the present example.First, silicon oxide was deposited as a buffer film 402 having athickness of 1000 to 3000 Å, e.g., 3000 Å, on a substrate 401 consistingof Corning 7059 glass. The substrate 401 measured 100 mm×100 mm. Todeposit the silicon oxide film, TEOS was decomposed and deposited byplasma-assisted CVD. This manufacturing step may also be carried out bysputtering techniques.

Then, an amorphous silicon film having a thickness of 300 to 1500 Å,e.g., 500 Å, was formed by plasma-assisted CVD or LPCVD. The laminatewas allowed to stand in an ambient maintained at 550 to 600° C. for 8 to24 hours to crystallize the amorphous film. At this time, a trace amountof nickel may be added to promote the crystallization. Techniques forlowering the crystallization temperature and for shortening thecrystallization time are disclosed in Japanese Patent Laid-Open No.244104/1994.

This fabrication step may be carried out by the use of optical annealingrelying on laser irradiation. A combination of thermal annealing andoptical annealing can also be utilized. The silicon film crystallized inthis way was etched to form island regions 403. A gate-insulating film404 was formed on these island regions 403. In the present example, asilicon oxide film having a thickness of 700 to 1500 Å, e.g., 1200 Å,was formed by plasma-assisted CVD. This fabrication step may also becarried out by sputtering techniques.

Thereafter, an aluminum film containing 1% by weight of Si or 0.1–0.3%by weight of Sc and having a thickness of 1000 Å to 3μ, e.g., 5000 Å,was formed by sputtering. This film was etched to form gate electrodes405, 406, and 407 (FIG. 4(A)).

Subsequently, an electrical current was passed through the gateelectrode within an electrolytic solution to anodize it. In this way, ananodic oxide film having a thickness of 500 to 2500 Å, e.g., 2000 Å, wasformed. The used electrolytic solution was obtained by dilutingL-tartaric acid with ethylene glycol to a concentration of 5% andadjusting the pH to 7.0±0.2 with ammonia. The laminate was immersed inthis solution. The positive terminal of a regulated current source wasconnected with the gate electrode on the substrate. A platinum electrodewas connected with the negative terminal. A voltage was applied whilemaintaining the current at 20 mA. The oxidation was continued until thevoltage reached 150 V. Then, the oxidation was continued whilemaintaining the voltage at 150 V until the current dropped below 0.1 mA.As a result, an aluminum oxide film, 408, 409, and 410, having athickness of 2000 Å was obtained.

Then, an impurity (phosphorus, in this example) was implanted into theisland region 403 by self-aligned ion doping techniques, using the gateelectrode portion (the gate electrode and surrounding anodic oxide filmportions) as a mask. Phosphine (PH₃) was used as a dopant gas. In thiscase, the dose was 1×10¹⁴ to 5×10¹⁵ atoms/cm². The accelerating voltagewas 60 to 90 kV. The dose was 1×10¹⁵ atoms/cm². The accelerating voltagewas 80 kV. As a result, N-type doped regions 411–414 were formed (FIG.4(B)).

The laminate was irradiated with KrF excimer laser light having awavelength of 248 nm and a pulse width of 20 nsec to activate the dopedregions 411–414. The energy density of the laser light was 200 to 400mJ/cm², preferably 250 to 300 mJ/cm². This fabrication step may make useof thermal annealing. Where a catalytic element such as nickel iscontained, the doped regions can be activated by thermal annealing at alower temperature than in normal process, as described in JapanesePatent Laid-Open No. 267989/1994.

The N-type doped regions were formed in this way. In the presentexample, the doped regions were remoter from the gate electrode by adistance equal to the thickness of the anodic oxide. That is, an offsetgate was formed.

Then, silicon oxide was formed as an interlayer insulator 415 having athickness of 5000 Å by plasma-assisted CVD. At this time, TEOS andoxygen were used as gaseous raw materials. The interlayer insulator 415and the gate-insulating film 404 were etched. Contact holes were formedin the N-type doped region 411. Then, an aluminum film was formed bysputtering techniques. The aluminum film was etched to form sourceelectrodes and interconnects, 416. These are extensions to image signallines (FIG. 4(C)).

Thereafter, a passivation film 417 was formed. In this example, asilicon nitride film was grown as the passivation film to a thickness of2000 to 8000 Å, e.g., 4000 Å, by plasma-assisted CVD, using a mixturegas of NH₃, SiH₄, and H₂. The passivation film 417, the interlayerinsulator film 415, and the gate-insulating film 404 were etched to formholes over the anodic oxide film 409. Contact holes for connection withpixel electrodes were formed in the N-type doped region 414. Then,indium tin oxide (ITO) was sputtered as a film. This ITO film was etchedto form a pixel electrode 418.

The pixel electrode 418 was located on the opposite side of the anodicoxide film 409 from the gate electrode 406. Thus, a capacitor 419 wascreated. If the N-type doped regions 412 and 413 are maintained at thesame potential, a MOS capacitor is created between the gate electrode406 and the underlying silicon semiconductor, the MOS capacitor usingthe gate-insulating film 404 as a dielectric (FIG. 4(D)).

An active matrix circuit devices having the N-channel TFTs 421, 422,capacitors 419, 420 were formed. In the present example, the pixelelectrodes cooperate with the gates of the MOS capacitors to formcapacitors and so the circuit is the same as the circuits shown in FIGS.1( a) and 1(b).

FIGS. 4(A)–4(F) are cross-sectional views. FIGS. 3(A)–3(D) are top viewsof the structures shown in these cross sections. In the present example,if the gate electrode intersects the island region 403 as shown in FIG.3(A), a TFT is formed by the gate 406. On the other hand, if the gate406 does not cross the island region 403 as shown in FIGS. 3(B)–3(D),then a MOS capacitor is formed.

In any case, a channel can be induced in the substantially intrinsicsemiconductor region located under the gate electrode, by placing thegate electrode 406 at an adequate potential. As a result, a capacitor iscreated. In the case of the circuit configuration shown in FIG. 3(A),the resistive component of the channel is inserted in series with twoTFTs which are located on opposite sides of the channel.

In order to introduce a resistor more positively, an impurity isintroduced first at a high concentration (step illustrated in FIG. 4(B))and then at a low concentration. If a lightly doped region 480 is formedonly close to the gate electrode 406, especially desirable results areobtained. The lightly doped region has a higher sheet resistance thanthe other doped regions 411–414. Therefore, the circuit shown in FIG.7(B) is obtained from the circuit (FIG. 7(A)) corresponding to theconfiguration in which another TFT is inserted in series between twoTFTs as shown in FIG. 3(A) (FIGS. 7(A) and 7(B)).

In the case of the circuit which corresponds to the configuration shownin FIG. 3(B) and in which a MOS capacitor is connected between two TFTs,the circuit shown in FIG. 7(D) is similarly derived (FIGS. 7(C) and7(D)).

In any case, the resistor 480 serves to reduce the OFF current. In thepresent example, as many as three gates exist. However, only twocontacts are needed. Since the capacitor is built, using multilevelmetallization, the area occupied is narrow.

FIG. 3(A) shows standard TFTs. FIG. 3(B) shows standard MOS capacitors.Because the channel widths of TFTs used in active matrix circuit devicesare generally small, it is difficult to secure sufficient capacitanceunless the width of the gate-406 is made sufficiently large. In thiscase, the island region 403 is widened only in the portion of the MOScapacitor as shown in FIG. 3(C). Furthermore, the shape of the gate 406may be modified as shown in FIG. 3(D).

However, if sufficient capacitance cannot be obtained by the use of anyof these methods, then the island region is changed into substantiallyU-shaped or horseshoe form, as shown in FIGS. 8(A)–8(C). A gate signalline and a capacitor line are made to overlap the U-shaped islandregion. That is, the semiconductor film overlaps the gate signal line,or gate electrodes 405 and 407, at two locations. The semiconductor filmoverlaps the capacitor line, or the gate electrode 406, at one location.The gate signal line is formed so as to extend parallel to the capacitorline. In this case, the gates 405 and 407 can be formed in line. This isadvantageous to the layout.

In FIG. 8(A), the gate electrode 406 divides the semiconductor regionand so the circuit is similar to the circuit shown in FIG. 3(A). Thestructure shown in FIG. 8(A) is characterized in that the semiconductorregion has a region 411 in contact with an image signal line, a region414 in contact with a pixel electrode, and two N- or P-type regions 412and 413. These two regions 412 and 413 are separated by a capacitor lineand a gate signal line.

If the capacitor line does not completely overlap the semiconductor filmbut an uncapped semiconductor region 481 is formed as shown in FIG.8(B), then no problems take place. The requirement is that the regions412 and 413 are separated by the gate signal line (i.e., gate electrodes405 and 407) and the capacitor line (i.e., the gate electrode 406).

On the other hand, in FIG. 8(C), the semiconductor regions 412 and 413are not divided by the gate electrode 406 and, therefore, the circuit issimilar to the circuit shown in FIG. 3(B).

In this way, the device density can be enhanced mainly by devising theshape of the semiconductor film, or the active layer. If a switchingdevice is built, using five TFTs as shown in FIG. 2(D), then thesemiconductor film is shaped like the letter N or S. Row-selectingsignal lines and gate signal lines are made to overlap thissemiconductor film.

EXAMPLE 7

The present example is shown in FIG. 4(E) in cross section. In thepresent example, a gate 454 is formed between N-channel TFTs 452 and453. A MOS capacitor 450 is formed between the gate 454 and theunderlying silicon semiconductor. The capacitor 450 uses agate-insulating film as a dielectric. Another gate 455 is formed betweenthe TFT 453 and the contact of a pixel electrode 457 to create a MOScapacitor 451 similarly. A metal interconnect 456 is an extension to animage signal line.

In the present example, the first MOS capacitor 450 is formed betweenthe TFTs 452 and 453. The second MOS capacitor 451 is formed between thepixel electrode 457 and the TFT 453. Therefore, the present examplecorresponds to the configuration shown in FIG. 1( d). In the presentexample, as many as four gates are present but only two contacts arenecessary. Consequently, the area occupied can be made relatively small.

EXAMPLE 8

The present example is shown in FIG. 4(F) in cross section. In thepresent example, a metal interconnect 474 extends from the interfacebetween N-channel TFTs 472 and 473. A gate 477 is formed between the TFT473 and a pixel electrode 476. The metal interconnect 474 extends to thetop surface of the gate 477. A capacitor 470 is formed, using an anodicoxide as a dielectric. Another MOS capacitor 471 is formed, using agate-insulating film as a dielectric, the gate-insulating film beinglocated between the gate 477 and an underlying silicon semiconductorlayer. A metal interconnect 475 is an extension to the image signalline.

In the present example, a capacitor is created between the gate 471 ofthe MOS capacitor and the conductive interconnects 474 extending, fromthe TFTs 472 and 473. Since the MOS capacitor is parallel to the pixelelectrode 476, the configuration corresponds to the configuration shownin FIG. 1( c).

EXAMPLE 9

The process sequence of the present example is illustrated in FIGS.5(A)–5(E). First, silicon oxide was deposited as a buffer layer 502 to athickness of 2000 Å on a substrate 501. An island region 503 was formedout of a crystalline silicon film. A gate-insulating film 504 was formedon the island region 503.

Then, an aluminum film having a thickness of 5000 Å was formed bysputtering techniques. In order to improve the adhesion to photoresistat a porous anodic oxide film formation step carried out later, a thinanodic oxide film having a thickness of 100 to 400 Å was formed on thesurface of the aluminum film.

Subsequently, a photoresist film having a thickness of about 1 μm wasformed by spin coating. Gate electrodes 505, 506, and 507 were etched bya well-known photolithographical method. Masks of the photoresist 508,509, and 510 were left on the gate electrode (FIG. 5(A)).

Then, the laminate was immersed in an aqueous solution of 10% oxalicacid. The positive terminal of a regulated current source was connectedto the gate electrodes 505 and 507 on the laminate. A platinum electrodewas connected to the negative terminal. Under this condition, ananodization process was carried out. This technique is disclosed inJapanese Patent Laid-Open 338612/1994. At this time, the anodization waseffected at a constant voltage of 5 to 50 V, e.g., 8 V, for 10 to 500minutes, e.g., 200 minutes. As a result, a porous anodic oxide, 511 and512, having a thickness of 5000 Å, was formed on the side surfaces ofthe gate electrodes 505 and 507. The obtained anodic oxide was porous.Since a masking material, 508 and 510, existed on the top surfaces ofthe gate electrodes, anodization process hardly progressed. No anodicoxidation was formed on the gate electrode 506 because no current waspassed through this electrode 506 (FIG. 5(B)).

Subsequently, the masking material was removed to expose the topsurfaces of the gate electrodes. In the same way as in Example 6,L-tartaric acid was diluted with ethylene glycol to a concentration of5%. The pH was adjusted to 7.0±0.2 with ammonia. An electrical currentwas passed through the gate electrodes 505, 506, and 507 within theelectrolytic solution to conduct an anodization process. Thus, an anodicoxidation having a thickness of 500 to 2500 Å, e.g., 2000 Å, was formed.In consequence, dense aluminum coating, 513, 514, and 515, having athickness of 2000 Å was obtained.

Thereafter, an impurity (boron, in this example) was implanted into theisland silicon region 503 by self-alignment techniques, using the gateelectrode portion as a mask, to form a P-type doped region. In thepresent example, diborane (B₂H₆) was used as a dopant gas. The dose was1×10¹⁴ to 5×10¹⁵ atoms/cm². The accelerating voltage was 40 to 90 kV.For example, the dose was 1×10¹⁵ atoms/cm², and the accelerating voltagewas 65 kV. As a result, P-type doped regions 516–519 were formed (FIG.5(C)).

The laminate was irradiated with KrF excimer laser light having awavelength of 248 nm and a pulse width of 20 nsec to activate the dopedregions 516–519. Then, silicon oxide was deposited as an interlayerinsulator film 520 having a thickness of 3000 Å by plasma-assisted CVD.The interlayer insulator film 520 and the gate-insulating film 504 wereetched. Contact holes were created in the P-type doped region 516.Thereafter, an aluminum film was formed by sputtering techniques. Thealuminum film was etched to form an image signal line 521 (FIG. 5(D)).

Then, a passivation film 522 was formed. The passivation film 522, theinterlayer insulator film 520, and the gate-insulating film 504 wereetched to form holes over the anodic oxide film 514 and to form contactholes in the P-type doped region 519, the contact holes being used forcontact with pixel electrodes. ITO was deposited as a film. This ITOfilm was etched to form a pixel electrode 523. This pixel electrode 523was opposite to the gate electrode 506. Thus, a capacitor using theanodic oxide film 514 as a dielectric was created. If the P-type dopedregions 517 and 518 are maintained at the same potential, a MOScapacitor is created between the gate electrode 506 and the underlyingsilicon semiconductor layer. This MOS capacitor uses the gate-insulatingfilm 504 as a dielectric (FIG. 5(E)).

Active matrix circuit devices comprising the P-channel TFTs 526, 527,the capacitor 524, and the MOS capacitor 525 were formed by themanufacturing steps described thus far. In the present example, eachpixel electrode forms a capacitor together with the gate of a MOScapacitor. Therefore, the circuit similar is to the circuits shown inFIGS. 1( a) and 1(b) except that the transistor conductivity type isreversed.

In the present example, the OFF currents of the TFTs 526 and 527 arerequired to be suppressed. These TFTs have larger offset widths than theTFTs of Example 6. On the other hand, the MOS capacitor needs no offsetstructure and so the offset width of the MOS capacitor is set to a smallvalue.

EXAMPLE 10

FIGS. 9(A)–9(F) show the manner in which circuits are built according tothe present invention. Well-known process techniques or the processtechniques described in Example 6 or 9 may be used for this purpose andso these techniques will not be described in detail below.

First, substantially U-shaped or horseshoe semiconductor regions oractive layers 601–604 were formed. Where the active layer 601 is used asa reference layer, the active layer 602 forms the same column and thenext row. The active layer 603 forms the next column and the same row.The active layer 604 forms the next column and the next row (FIG. 9(A)).

Then, a gate-insulating film (not shown) was formed. Gate signal lines605, 606 and capacitor lines 607, 608 were formed out of thegate-insulating film. The positional relations among the gate signallines, the capacitor lines, and the active layers were the same as thepositional relations shown in FIG. 8 (FIG. 9(B)).

After introducing an impurity into the active layers, contact holes(such as 611) were formed at the left ends of the active layers. Then,image signal lines 609 and 610 were created (FIG. 9(C)).

Then, pixel electrodes 612 and 613 were created in regions surrounded bythe gate signal lines and the image signal lines. In this way, a TFT 614was formed by the capacitor line 607 and the active layer 601. At thistime, the capacitor line 607 did not overlap the pixel electrode 613 ofthe same row but overlapped the pixel electrode 612 of the immediatelypreceding row. That is, with respect to the pixel electrode 613, thecapacitor line 608 of the immediately following row overlapped the pixelelectrode 613, thus forming a capacitor 615. A constant voltagesufficient to operate the TFT 614 as another MOS capacitor was appliedto the capacitor lines 607 and 608 in the same way as in the otherexamples (FIG. 9(D)).

In this way, the gate signal line was laid to overlap the pixelelectrode of the immediately preceding or following row. Thus, a circuitas shown in FIG. 9( e) was created. The capacitor 615 corresponds to thecapacitor 104 shown in FIG. 1(A). A capacitor can be added withoutsubstantially lowering the aperture ratio. This is effective inenhancing the device density.

For reference, FIG. 9(F) shows prior art unit pixel (see FIG. 2(A))formed in a region surrounded by row-selecting signal lines and imagesignal lines which are regularly spaced from each other. The regionshielded by the auxiliary capacitor 202 is the same as the region of thepresent example (FIG. 9(D)). In the present example, the semiconductorregion 601 is almost totally covered with the signal lines 605 and 607.Consequently, the aperture ratio does not decrease. On the other hand,in the prior art structure (FIG. 9(F)), gate electrodes branching fromthe row-selecting signal lines deteriorate the aperture ratio.

The circuit arrangement and other features of the present example are asfollows.

(1) Those portions of the semiconductor region 601 which makeconnections with the image signal lines and with the pixel electrodesare located on the same side as the gate signal line 605.

(2) The capacitor line 607 is located on the opposite side of the gatesignal line 605.

(3) The adjacent pixel electrode 612 overlaps the capacitor line 607 ofthe same row but does not overlap the image signal line 609 or 610.

With respect to the relation of the switching devices of an activematrix circuit to pixel-electrodes, the pixel electrodes should notoverlap any region to which an image signal is applied. This requirementis satisfied because of the features described above. Furthermore, theaperture ratio can be enhanced.

EXAMPLE 11

FIGS. 10(A)–10(F) illustrate the process sequence of the presentexample. First, silicon oxide was deposited as a buffer layer 702 to athickness of 2000 Å on a substrate 701. Island regions 703 were formedout of a crystalline silicon film. A gate-insulating film 704 was formedon the island regions.

Then, gate electrodes 705–707 consisting mainly of aluminum and coatedwith a barrier type anodic oxide were formed by the use of techniquessimilar to the techniques used in Example 9. In the present example, aporous anodic oxide 708 was deposited on the side surfaces of only thecentral gate electrode (FIG. 10(A)).

The gate-insulating film 704 was etched by dry etching. As a result, thegate-insulating film was left on those portions 709–711 which werelocated under the gate electrodes 705–707 and under their respectiveanodic oxide portions (FIG. 10(B)).

Thereafter, the porous anodic oxide 708 was selectively removed.Techniques for this manufacturing step are disclosed in the above-citedJapanese Patent Laid-Open No. 338612/1994 (FIG. 10(C)).

Subsequently, an impurity (phosphorus, in this example) was implantedinto the island silicon regions 703 by self-alignment techniques, usingthe gate electrode portion and the gate-insulating film 710 as a mask,to form an N-type doped region. In the present example, this ionimplantation process consisted substantially of two steps In the firststep, the impurity was implanted at a high accelerating voltage and at alow dose. In the second step, the impurity was implanted at a lowaccelerating voltage and at a high dose. In an example of the firststep, the accelerating voltage was 80 kV, and the dose was 1×10¹³atoms/cm². In an example of the second step, the accelerating voltagewas 20 kV, and the dose was 5×10¹⁴ atoms/cm².

In the first step, a high accelerating energy can be imparted to ions.Therefore, ions can be implanted through the gate-insulating film 710.The doped regions formed at this time are lightly doped. In the secondstep, heavily doped regions can be formed but it is impossible tointroduce ions through the gate-insulating film 710. As a result,heavily doped N-type regions 712–715 and lightly-doped N-type regions716, 717 could be separately formed (FIG. 10(D)).

After activating the doped regions 712–717 formed in this way, a siliconoxide film 718 was formed as an interlayer insulator film to a thicknessof 3000 Å by plasma-assisted CVD. The interlayer insulator film 718 wasetched, and contact holes were formed in the heavily doped N-typeregions 712. Then, an aluminum film was formed by sputtering techniques.The aluminum film was etched to form image signal lines 719.

Then, a passivation film 720 was formed. The passivation film 720 andthe interlayer insulator film 718 were etched to form contact holes inthe heavily doped N-type region 715, the contact holes being used forconnection with pixel electrodes. An ITO film was formed and etched toform pixel electrodes 721 (FIG. 10(E)).

A circuit as shown in FIG. 10(F) could be obtained by the fabricationsteps described thus far. This can be used as a capacitor by maintainingthe gate electrode 706 at an appropriate potential. The lightly dopedN-type regions 716 and 717 act as resistors inserted in series with TFTsand are effective in reducing the OFF current (FIG. 10(E)).

EXAMPLE 12

FIGS. 11(A)–11(C) show the manner in which circuits are built accordingto the present invention. Well-known process techniques or the processtechniques-described in Example 6 or 9 may be used for this purpose andso these techniques will not be described in detail below. The conceptof the circuit arrangement of the present example is essentially thesame as the concept of Example 10 (FIGS. 9(A)–9(F)). However, in thepresent example, TFTs are protected against extraneous light by makingpositive use of shielding of capacitor lines and image signal lineswhich are formed out of a shielding film. A black matrix circuit isbuilt from the TFTs to clearly distinguish colors among pixels.

The process sequence is the same as the sequence used in Example 10.First, a substantially U-shaped active layer 801 was formed. Then, agate-insulating film (not shown) was deposited on the active layer. Gatesignal lines 802 and capacitor lines 803 were formed. The capacitorlines were arranged so as to surround the portion where pixel electrodeswere formed as shown in FIG. 11(A).

After implanting an impurity into the active layer, contact holes wereformed at the left end of the active layer. Also, an image signal line804 was formed. This image signal line was also so arranged as to coverthe surroundings of the pixel electrodes (especially, the surroundingsof TFTs) (FIG. 11(B)).

As can be seen from the figure, the transparent portions are only thecentral portion in which the pixel electrodes are formed and twodot-like portions located at the top right end of each pixel. In thesedot-like portions, the gaps between the gate signal lines and thecapacitor lines are not filled up with the image signal lines. The otherportions are shielded against light by the gate signal lines, thecapacitor lines, and the image signal lines. Especially, in the presentexample, the imaged signal lines are arranged on the TFTs. These imagesignal lines prevent extraneous light from entering the TFTs. This iseffective in stabilizing the characteristics of the TFTs.

Then, a pixel electrode 805 was formed in the above-described centralportion. The transparent regions excluding the pixel electrode were onlythe gap 807 between the pixel electrode 805 and the image signal line804 and the gap 806 among the gate signal line 802, the capacitor line803, and the image signal line 804. The gap 807 was necessary to preventthe image signal line from overlapping the pixel electrode. The gap 806was needed to separate the adjacent image signal lines. However, thesegaps 807 and 806 have sufficiently small areas.

A structure equivalent to a black matrix could be obtained, usingexisting conductive interconnects without forming a black matrix (FIG.11(C)).

The cross section of TFT portions of the present example is conceptuallyshown in FIG. 12. As shown, a TFT located on the side of an image signalline 804 is totally coated with the image signal line 804. A TFT locatedin the center is partially coated with the image signal line 804. In thepresent example, capacitor lines often overlap pixel electrodes andimage signal lines. Therefore, sufficient care must be exercised inproviding insulation between metallization layers. The insulation can beeffectively enhanced by forming an anodic oxide film at least on the topsurfaces of capacitor lines (FIG. 12).

EXAMPLE 13

The present example is illustrated in FIGS. 13 and 14. An appropriateinsulating film may or may not be formed as a buffer layer on adielectric surface 1 of a substrate. First, an island-shaped thin-filmsilicon region 2 halving a thickness of 100 to 1500 Å, e.g., 800 Å, wasformed either on the substrate or on the dielectric surface 1. As shownin FIG. 13, the silicon region 2 had pads 3, 5 for formation of contactsand an intervening channel formation portion 4. The silicon region canbe made of either amorphous silicon or polycrystalline silicon (FIG.13).

Then, a gate-insulating film 6 was formed out of silicon oxide to athickness of 1200 Å. An appropriate amount of phosphorus was added tothe polysilicon film to improve its conductivity. This polysilicon filmwas formed to a thickness of 3000 Å by LPCVD. This polysilicon film wasetched to form a gate line 7. The material of the gate line is notlimited to polysilicon. For example, metal materials such as aluminumand tantalum can also be employed. Especially, where aluminum is used,the sheet resistance of the gate line can be effectively lowered (FIG.14).

Thereafter, an impurity (phosphorus, in this example) was introducedinto the island-shaped silicon region 2 by self-aligned ion implantationtechniques, using the gate line 7 as a mask. In this manner, dopedregions 8 (source) and 9 (drain) were created. At this time, no dopedregion was formed under the gate electrode. Rather, a channel 4 wascreated. After the ion implantation, the introduced dopant might beactivated by appropriate means such as thermal annealing or laserannealing (FIG. 15).

Then, a film of silicon oxide or silicon nitride 10 having a thicknessof 2000 to 10000 Å, e.g., 5000 Å, was formed by plasma-assisted CVD. Inthis way, a first interlayer insulator layer was formed. A contact hole11 extending to a pad 3 was formed, the pad 3 being used for contactwith the silicon region (FIG. 16).

Subsequently, an aluminum film having a thickness of 5000 Å was formedby sputtering techniques. The aluminum film was etched to form a sourceline 12. In the contact hole 11 formed at the previous manufacturingstep, the source line 12 formed a contact with a source 8 (FIG. 17).

Then, silicon nitride or silicon oxide was deposited as a secondinterlayer insulator layer 13 to a thickness of 2000 to 5000 Å, e.g.,000 Å. A contact hole extending to a pad 5 was formed in the secondinterlayer insulator layer 13, the pad 5 being used for contact with anisland silicon region. An ITO film having a thickness of 1000 Å wasformed by sputtering techniques. The ITO film was etched to form a pixelelectrode 14 (FIG. 18).

In the present example, the direction of channel in the TFT (directedfrom the source to the drain) is parallel to the source line as shown inFIG. 19. This is a feature compared with the prior art TFT shown in FIG.22.

In the present and other examples of the present invention, the channel4 is located under the source line 12. The source and drain adjacent tothe channel 4 overlap with the source line, thus forming a parasiticcapacitor, unlike the prior art TFT. A parasitic capacitor 15 formedbetween the drain 9 and the source line 12 presents a problem duringoperation of the active matrix circuit. However, as can be seen fromFIG. 18, the drain 9 and the source line 12 are isolated from each otherby the first interlayer insulator 10. The width of the island siliconregion where an overlap is formed can be made sufficiently small. Thisoverlap is sufficiently smaller than the area of the pixel electrode 14.For these and other reasons, the image displayed is not greatlyaffected.

EXAMPLE 14

The present example is illustrated in FIG. 20. The process sequence isthe same as the process sequence of Example 1. In the present example,each island silicon region was shaped into a substantially U-shapedform. Gate lines were formed so as to intersect the silicon region.Consequently, two channels, or TFTs, 16 and 17 were formed. One end ofthe island silicon region was brought into contact with a source line.The source line was formed over the channel 16. The other end wasbrought into contact with a pixel electrode.

More specifically, in the present example, two TFTs connected in seriesare formed for each one pixel, as shown in FIG. 20. It is known that inthis structure, leakage current from the pixel can be reduced, asdisclosed in Japanese Patent Publication No. 38755/1991. In the presentexample, it is not necessary to form branch lines extending from gatelines, unlike the prior art techniques. Therefore, the area occupied byTFTs can be reduced. Furthermore, the aperture ratio can be enhanced.

Also in the present example, the drain of the left TFT acting also asthe source of the right TFT overlaps the source line, thus forming aparasitic capacitor 18. In the present example, one TFT is added betweenthe parasitic capacitor 18 and the pixel electrode, compared withExample 1. Consequently, the effect is limited (FIG. 20).

As described thus far, the drop of voltage developed across a liquidcrystal cell can be successfully suppressed by connecting plural TFTsand/or an appropriate capacitor. In the present invention, especially inthe TFT 222 shown in FIG. 2(C), the voltage developed between the sourceand drain is maintained at a low level throughout the driving process.Generally, deteriorations of TFTs depend on the voltage developedbetween the source and drain. The deteriorations can be prevented bymaking use of the present invention.

The present invention can be advantageously used in applications whereimages are required to be displayed at higher quality. That is, wherequite large number of color tones of more than 256 gray levels arerepresented, it is necessary that electric discharge in the liquidcrystal cell be suppressed within 1% during one frame. None of theconventional systems illustrated in FIGS. 2(A) and 2(B), respectively,are suitable for this purpose.

The present invention is especially adapted for an active matrix displayusing TFTs comprising a crystalline silicon semiconductor, the activematrix display being suitable for active matrix addressing, especiallywhere the number of rows of picture elements is large. Generally, in amatrix display having a large number of rows, each row is activated fora short time. Therefore, TFTs of crystalline silicon semiconductor arenot suitable for this matrix display. However, TFTs using crystallinesilicon semiconductor suffer from large OFF current. For this reason,the present invention can contribute to this technical field because theinvention can suppress the OFF current. Of course, TFTs comprisingamorphous silicon semiconductor are employed to advantage.

In the illustrated examples, TFTs and MOS capacitors are mainly of thetop gate type. The invention can be applied with similar utility to thebottom gate type and other structures. Additionally, a switching devicecomprising a combination of the top gate type and the bottom gate typemay be used.

The present invention can enhance the aperture ratio of an active matrixcircuit. In consequence, the display characteristics of anelectrooptical device using this active matrix circuit can be improved.In this way, the present invention is industrially advantageous.

1. A liquid crystal device comprising: a source line over a substrate; agate line over said substrate extending across said source line; and apixel over said substrate at an intersection of said source line andsaid gate line, said pixel comprising: at least first and second thinfilm transistors wherein a source or drain of said first thin filmtransistor is electrically connected to said source line; and a pixelelectrode electrically connected to a source or drain of said secondthin film transistor wherein said first and second thin film transistorsare electrically connected in series between said pixel electrode andsaid source line; wherein a portion of said source line covers at leasta channel region of said first thin film transistor while a channelregion of said second thin film transistor is not covered by any portionof said source line, and wherein a width of said source line is largerthan a width of said channel region of said first thin film transistor,said width of said channel region taken along a direction perpendicularto a current flow direction of said channel region.
 2. The liquidcrystal device according to claim 1 wherein each of said first andsecond thin film transistors has a top gate structure or a bottom gatestructure.
 3. The liquid crystal device according to claim 1 wherein thechannel regions of said first and second thin film transistors comprisepolysilicon.
 4. The liquid crystal device according to claim 1 whereinsaid pixel electrode is formed on a different layer from said sourceline.
 5. A projector comprising the liquid crystal device according toclaim
 1. 6. The liquid crystal device according to claim 1 wherein thesource or drain of said first thin film transistor is directly connectedto said source line.
 7. The liquid crystal device according to claim 1wherein said pixel electrode is directly connected to the source ordrain of the second thin film transistor.
 8. A liquid crystal displaydevice comprising: a source line over a substrate; a gate line over saidsubstrate extending across said source line; and a pixel over saidsubstrate at an intersection of said source line and said gate line,said pixel comprising: at least first and second thin film transistorswherein one of a source or drain of said first thin film transistor iselectrically connected to said source line; and a pixel electrodeelectrically connected to a source or drain of said second thin filmtransistor wherein said first and second thin film transistors areelectrically connected in series between said pixel electrode and saidsource line; wherein a portion of said source line covers at least (1)the source or drain of said first thin film transistor which iselectrically connected to said source line and (2) at least a part of achannel of said first thin film transistor while both of (1) the sourceor drain of said second thin film transistor which is electricallyconnected to the pixel electrode and (2) a channel of said second thinfilm transistor, are not covered by any portion of said source line, andwherein a width of said source line is larger than a width of saidchannel region of said first thin film transistor, said width of saidchannel region taken along a direction perpendicular to a current flowdirection of said channel region.
 9. A liquid crystal display deviceaccording to claim 8 wherein each of said first and second thin filmtransistors has a top gate structure or a bottom gate structure.
 10. Aliquid crystal display device according to claim 8 wherein each of saidfirst and second thin film transistors has a channel region comprisingpolysilicon.
 11. The liquid crystal display device according to claim 8wherein said pixel electrode is formed on a different layer than saidsource line.
 12. A projector comprising the liquid crystal deviceaccording to claim
 8. 13. The liquid crystal device according to claim 8wherein said one of the source or drain of said first thin filmtransistor is directly connected to said source line.
 14. The liquidcrystal device according to claim 8 wherein said pixel electrode isdirectly connected to the source or drain of the second thin filmtransistor.
 15. A display device comprising: a substrate; a source lineand a gate line over said substrate wherein said gate line extendsacross said source line; a pixel electrode over said substrate; a firstthin film transistor formed over said substrate and connected to saidsource line; a second thin film transistor formed over said substrateand electrically connected to said first thin film transistor and saidpixel electrode, each of said first and second thin film transistorshaving source, drain and channel regions, and a gate electrode adjacentto said channel region wherein the gate electrodes of said first andsecond thin film transistors are commonly connected to said gate line;and wherein at least the channel region of said first thin filmtransistor is overlapped at least partially with said source line whilethe channel region of said second thin film transistor is not overlappedwith said source line, and wherein a width of said source line is largerthan a width of said channel region of said first thin film transistor,said width of said channel region taken along a direction perpendicularto a current flow direction of said channel region.
 16. The displaydevice according to claim 15 wherein each of said first and second thinfilm transistors is a bottom gate type.
 17. The display device accordingto claim 15 wherein said device is a liquid crystal device.
 18. Thedisplay device according to claim 15 wherein said channel region of saidfirst thin film transistor is completely overlapped with said sourceline.
 19. A display device comprising: a substrate; a semiconductorlayer formed over said insulating surface, said semiconductor layercomprising at least first and second channel regions, a first impuritydoped region between said first and second channel regions, and a pairof second impurity doped regions wherein said first and second channelregions are disposed between said pair of second impurity regions; afirst insulating layer formed over said semiconductor layer; a gate lineformed over said first insulating layer wherein said gate line extendsover said first and second channel regions; a second insulating layerformed over said gate line; a source line formed over said secondinsulating layer wherein said source line is electrically connected toone of said second impurity regions; a third insulating layer formedover said source line; a pixel electrode formed over said thirdinsulating layer wherein said pixel electrode is electrically connectedto the other one of said second impurity doped regions, wherein one ofthe first and second channel regions is at least partially overlapped bysaid source line while the other one is not overlapped by said sourceline, and wherein a width of said source line is larger than a width ofsaid first channel region, said width of said first channel region takenalong a direction perpendicular to a current flow direction of saidfirst channel region.
 20. The display device according to claim 19wherein said semiconductor layer comprises polysilicon.
 21. The displaydevice according to claim 19 wherein said semiconductor layer has a Ushape.
 22. The display device according to claim 19 wherein said sourceline is in direct contact with said one of the second impurity dopedregions.
 23. The display device according to claim 19 wherein said pixelelectrode is in direct contact with said other one of the secondimpurity doped regions.
 24. The display device according to claim 19wherein said device is a liquid crystal device.
 25. The display deviceaccording to claim 19 wherein said channel region of said first thinfilm transistor is completely overlapped with said source line.